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gate current中文是什么意思

  • 門電流
  • 閘控電流
  • 柵電流

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  • 例句與用法
  • Once the device begins to conduct , it is latched on and the gate current can be removed
    一旦器件(晶閘管)導(dǎo)通,門極電流即可去掉。
  • With respect to a bipolar transistor , the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction
    就雙極型晶體管而言,其門電流等于或超過必要的值,使發(fā)射極集電極充分導(dǎo)通的一種狀態(tài)。
  • The thyristor can be trigged into the on - state by applying a pulse of positive gate current for a short duration provided that the device is in its forward blocking state
    如果是處于正向阻斷狀態(tài),只要在門極提供一個短暫的正脈沖,晶閘管就會導(dǎo)通。
  • The large gate current brings out a lot of questions such as thermal stability , thermal dissipation , lifetime etc , so , it affects the device ' s function and the device ca n ' t work normally
    如此大的柵電流,將會產(chǎn)生很多嚴重的問題,如熱穩(wěn)定性、散熱、壽命等問題,嚴重地影響著器件性能,使器件不能正常工作,以致限制了集成電路的進一步發(fā)展。
  • Since metal - oxide - semiconductor ( mos ) device appeared , integration of integrated circuit ( ic ) expands as moore law . meanwhile the dimension of device scales down , the thickness of sio2 gate dielectric shrinks as the same law . but as the thickness of sio2 gate dielectric reaches at isa , the gate current rises very quickly and reaches at 1 10a / cm2
    自從金屬-氧化物-半導(dǎo)體( mos )器件出現(xiàn)以來,集成電路的集成度按照摩爾定律增加,相應(yīng)地,器件的物理尺寸按照等比縮小的原則不斷縮小, sio _ 2作為柵介質(zhì)的厚度不斷縮小,特征尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質(zhì)的厚度小于1 . 7nm 。
  • 其他語種釋義
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