gate n. 1.大門,扉,籬笆門,門扇。 2.閘門;城門;洞門;隘口,峽道。 3.【冶金】澆注道,澆口,切口;【無線電】門電路,選通電路,選通脈沖,啟開脈沖,時間限制電路。 4.(運動會、展覽會等的)門票收入;觀眾數(shù);入場費。 5.〔英國〕倫敦 Billingsgate, Newgate 等的略稱。 6.鋸架。 7.電影放映機鏡頭窗口。 8.〔俚語〕解雇。 a folding gate折疊門,活柵門。 a turnpike gate征收通行稅的關(guān)卡。 go [pass] through the gate(s) 進門。 enter at a gate從大門進去。 There was a gate of thousands. 觀眾數(shù)以千計。 at the gate(s) of death 奄奄一息。 crash the gate 〔俚語〕擅自入場。 get the gate 〔美國〕被趕出,被解雇。 give sb. the gate 〔美國〕迫令退席;解雇。 keep the gate 守門。 open a gate to [for] 大開方便之門,給…以機會。 the gate of horn 應(yīng)驗的夢兆,角門。 the gate of ivory 不應(yīng)驗的夢兆,牙門〔據(jù)神話傳說,應(yīng)驗的夢自角門入,不應(yīng)驗的夢自牙門入〕。 vt. 1.在…裝門。 2.(英大學(xué))禁止(學(xué)生)外出。 3.用門控制。 adj. -less 無門的。 gate2 n. 1.〔古語〕街道,路〔一般作地名用,如 kirkgate〕。 2.〔方言〕方式,方法。
"查查詞典"手機版
千萬人都在用的超大詞匯詞典翻譯APP
例句與用法
Once the device begins to conduct , it is latched on and the gate current can be removed 一旦器件(晶閘管)導(dǎo)通,門極電流即可去掉。
With respect to a bipolar transistor , the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction 就雙極型晶體管而言,其門電流等于或超過必要的值,使發(fā)射極集電極充分導(dǎo)通的一種狀態(tài)。
The thyristor can be trigged into the on - state by applying a pulse of positive gate current for a short duration provided that the device is in its forward blocking state 如果是處于正向阻斷狀態(tài),只要在門極提供一個短暫的正脈沖,晶閘管就會導(dǎo)通。
The large gate current brings out a lot of questions such as thermal stability , thermal dissipation , lifetime etc , so , it affects the device ' s function and the device ca n ' t work normally 如此大的柵電流,將會產(chǎn)生很多嚴重的問題,如熱穩(wěn)定性、散熱、壽命等問題,嚴重地影響著器件性能,使器件不能正常工作,以致限制了集成電路的進一步發(fā)展。
Since metal - oxide - semiconductor ( mos ) device appeared , integration of integrated circuit ( ic ) expands as moore law . meanwhile the dimension of device scales down , the thickness of sio2 gate dielectric shrinks as the same law . but as the thickness of sio2 gate dielectric reaches at isa , the gate current rises very quickly and reaches at 1 10a / cm2 自從金屬-氧化物-半導(dǎo)體( mos )器件出現(xiàn)以來,集成電路的集成度按照摩爾定律增加,相應(yīng)地,器件的物理尺寸按照等比縮小的原則不斷縮小, sio _ 2作為柵介質(zhì)的厚度不斷縮小,特征尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質(zhì)的厚度小于1 . 7nm 。